Incorporation of an Alloy-Though Passivating-Ledge Process into a Fully Self- Aligned InGaP/GaAs HBT Process
نویسنده
چکیده
Alloying base contacts directly through an InGaP emitter layer provides excellent passivation of the GaAs base in HBTs. Processes which utilize this ledge formation scheme and a self-aligned, wet-chemical basecollector etch can suffer degradation in DC performance. Layouts with a hexagonal emitter can circumvent any DC performance degradation because the base electrode can be used as the etch mask on all sides of the device.
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